DocumentCode
2936489
Title
High Density Static RAM for In-Situ Bulk Data Storage
Author
Mellinger, Ed
Author_Institution
Woods Hole Oceanographic Institution, Woods Hole, MA, USA
fYear
1986
fDate
23-25 Sept. 1986
Firstpage
444
Lastpage
447
Abstract
Static CMOS Random Access Memory (RAM) can be packaged to achieve a density of 1 MByte per running inch of 6" I.D. pressure case, using 64 kbit memory devices. A bulk data storage subsystem using this technique, including 1 MByte/sec CPU interface, backup power system, and memory array of up to 16 MBytes, was constructed and tested in an operational microstructure profiler. Results are discussed, and the general advantages and disadvantages of this data storage method are considered.
Keywords
Decoding; Electronics packaging; Energy consumption; Logic devices; Manufacturing; Pins; Power dissipation; Printed circuits; Random access memory; Read-write memory;
fLanguage
English
Publisher
ieee
Conference_Titel
OCEANS '86
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/OCEANS.1986.1160459
Filename
1160459
Link To Document