DocumentCode
293659
Title
Monolithic GaAs and InP based frequency multiplier arrays
Author
Qin, Xiaohui ; Shu, S. ; Liao, J.Y. ; Liu, H. X L ; Domier, C.W. ; Luhmann, N.C., Jr.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
1
fYear
1993
fDate
1993
Firstpage
12420
Abstract
Monolithic GaAs and InP based frequency multiplier arrays containing thousands of devices have been successfully fabricated for use in quasi-optical millimeter-wave systems. Monolithic frequency multiplier arrays have produced frequency doubled power levels of 2.1 W at 66 GHz, and frequency tripled power levels of 5.0 W at 99 GHz, with high efficiencies. New approaches for increasing the efficiency and power handling capabilities of the arrays are described
Keywords
III-V semiconductors; MIMIC; frequency multipliers; gallium arsenide; indium compounds; millimetre wave frequency convertors; 2.1 W; 5 W; 66 GHz; 99 GHz; EHF; GaAs; InP; MIMIC; MM-wave IC; frequency multiplier arrays; monolithic arrays; power handling capabilities; quasi-optical millimeter-wave systems; Fabrication; Frequency; Frequency conversion; Gallium arsenide; Indium phosphide; Millimeter wave devices; Power generation; Schottky diodes; Solid state circuits; Space charge; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings, 1993. APMC '93., 1993 Asia-Pacific
Conference_Location
Hsinchu
Print_ISBN
0-7803-1352-6
Type
conf
DOI
10.1109/APMC.1993.468470
Filename
468470
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