DocumentCode
2937830
Title
Laser-induced antiproton-positron recombination
Author
Melnikov, L.A. ; Ryabinina, M.V.
Author_Institution
Saratov State Univ., Russia
fYear
2000
fDate
10-15 Sept. 2000
Abstract
Summary form only given. The most favorable conditions for positron-antiproton capture in traps can be provided when high-density clouds of accumulated antiprotons and positrons are brought and kept together by means of specially chosen electromagnetic field and strong cooling. However, the cross-section of the spontaneous recombination remains very small even at extremely low temperatures. The recombination rate may be increased in an external resonance field. In the present report the possibility of increase the recombination rate by means of laser pulses is estimated. An initial state of antiproton-positron system will belong to a continuous spectrum final state and to a discrete one. Taking into account the possibility to use short pulses, we analyzed system state after the laser pulse.
Keywords
atom-positron collisions; hydrogen ions; ion recombination; laser beam effects; continuous spectrum final state; discrete state; gain factor; high-density clouds; laser-induced antiproton-positron recombination; laser-induced recombination; laser-induced transitions; particle traps; photoionisation rate; positron-antiproton capture; recombination cross-section; recombination rate; short pulses; spontaneous recombination; strong cooling; Clouds; Cooling; Electromagnetic fields; Genetic expression; Laser modes; Laser transitions; Optical pulses; Positrons; Pulse shaping methods; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2000. Conference Digest. 2000 International
Conference_Location
Nice, France
Print_ISBN
0-7803-6318-3
Type
conf
DOI
10.1109/IQEC.2000.907913
Filename
907913
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