Body-Biasing Control on Zero-Temperature-Coefficient in Partially Depleted SOI MOSFET

Author

Kaamouchi, M. El ; Dambrine, G. ; Moussa, M. Si ; Emam, M. ; Vanhoenacker-Janvier, D. ; Raskin, J.P.

Author_Institution

Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve

fYear

2008

fDate

23-25 Jan. 2008

Firstpage

114

Lastpage

117

Abstract

This work investigates the possibility to tune the zero-temperature-coefficient (ZTC) points in partially depleted (PD) SOI nMOSFET technology by controlling the body-source forward bias (V_BS). Measured transconductance and drain current in the saturation region at temperatures between 25 and 200degC were observed for various body-source forward bias conditions. It is found that the variation of threshold voltage (V_TH) with body bias has an influence on ZTC points. The measurement results show wide voltage-range of gate-voltage giving either the transconductance ZTC point (V_GS,_ZTC9m) or the drain-current ZTC point (V_GS,_ZTC1DS) opening important opportunities in RF circuits design for nigh temperature applications.

Keywords

MOSFET; silicon-on-insulator; SOI MOSFET; body-source forward bias control; drain current; temperature 25 degC to 200 degC; threshold voltage; transconductance; zero-temperature-coefficient; CMOS process; CMOS technology; Current measurement; Leakage current; MOS devices; MOSFET circuits; Temperature distribution; Temperature sensors; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2008. SiRF 2008. IEEE Topical Meeting on

Conference_Location

Orlando, FL

Print_ISBN

978-1-4244-1855-8

Electronic_ISBN

978-1-4244-1856-5

Type

conf

DOI

10.1109/SMIC.2008.35

Filename

4446269