Determination of HEMTs noise parameters vs. temperature using two measurement methods

Author

Caddemi, A. ; Di Paola, A. ; Sannino, M.

Author_Institution

Dipt. di Ingegneria Elettrica, Palermo Univ., Italy

Volume

2

fYear

1997

fDate

19-21 May 1997

Firstpage

1078

Abstract

Commercial pseudomorphic HEMTs have been characterized in the 233-313 K temperature range from 6 to 18 GHz with the aim of validating the use of a simplified procedure. We predict the complete noise performance of such pHEMTs by means of a very reduced set of measurements, i.e. the scattering parameters vs. frequency at different temperatures and simply the F₅₀ values vs. frequency at room temperature. The computed noise parameters vs. temperature are compared with those determined by application of the standard measurement procedure. The results show a good accuracy and consistency which allows the simplified method to be employed when rapid noise testing vs. temperature is needed

Keywords

S-parameters; electric noise measurement; high electron mobility transistors; microwave field effect transistors; microwave measurement; semiconductor device noise; semiconductor device testing; 233 to 313 K; 6 to 18 GHz; F₅₀ values; frequency dependence; noise parameters; pseudomorphic HEMTs; rapid noise testing; scattering parameters; simplified procedure; temperature dependence; Frequency; HEMTs; MODFETs; Measurement standards; Noise measurement; Noise reduction; PHEMTs; Scattering parameters; Temperature distribution; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 1997. IMTC/97. Proceedings. Sensing, Processing, Networking., IEEE

Conference_Location

Ottawa, Ont.

ISSN

1091-5281

Print_ISBN

0-7803-3747-6

Type

conf

DOI

10.1109/IMTC.1997.612366

Filename

612366