Passivation effects of ion plating capping oxide on poly-Si TFTs

Author

Ching-Fa Yeh ; Tai-Ju Chen ; Jiann-Shiun Kao

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1997

fDate

23-25 June 1997

Firstpage

56

Lastpage

57

Abstract

The reduction of defect density in poly-Si active layers is an important issue to improve poly-Si TFT performance. A novel method has been developed for efficient passivation of these defects using ion plating (IP) oxides as capping layers. IP oxide is deposited while Si and O/sub 2/ gases are activated and ionized by an Ar plasma, and shows excellent physicochemical and electrical properties even when deposited at room temperature. IP oxide has been shown to be feasible for application as a poly-Si TFT gate insulator, and to contribute to excellent device characteristics.

Keywords

MOSFET; elemental semiconductors; insulating thin films; ion plating; passivation; plasma deposited coatings; silicon; thin film transistors; Ar; Ar plasma; O/sub 2/; Si-SiO/sub 2/; TFT gate insulator; defect density reduction; ion plating capping oxide; passivation effects; poly-Si active layers; polysilicon TFTs; Annealing; Bonding; Electron devices; Paramagnetic resonance; Passivation; Plasma applications; Plasma devices; Plasma properties; Plasma temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1997. 5th

Conference_Location

Fort Collins, CO, USA

Print_ISBN

0-7803-3911-8

Type

conf

DOI

10.1109/DRC.1997.612473

Filename

612473