A >400 GHz fmax transferred-substrate HBT integrated circuit technology

Author

Pullela, R. ; Lee, Q. ; Agarwal, B. ; Mensa, D. ; Guthrie, J. ; Samoska, L. ; Rodwell, M.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1997

fDate

23-25 June 1997

Firstpage

68

Lastpage

69

Abstract

HBTs are used in Gb/s fiber-optic ICs, GHz analog-digital converters, and microwave PLLs. To permit clock rates exceeding 100 GHz, transistors with several hundred GHz bandwidth are required. The interconnects must have small inductance and capacitance per unit length, and the transistor spacings must be small to minimize wire lengths. Given that fast HBTs operate at /spl sim/10/sup 5/ A/cm/sup 2/, efficient heat sinking is then vital. We report here a transferred-substrate HBT IC technology with record HBT power-gain cutoff frequency (f/sub max/). The interconnects, microstrip on Benzocyclobutene (BCB), have a low (/spl epsiv//sub r/=2.7) dielectric constant for low capacitance and a ground plane for low ground-return inductance. Transistor heatsinking is provided by electroplated gold thermal vias.

Keywords

bipolar integrated circuits; heat sinks; heterojunction bipolar transistors; integrated circuit technology; 400 GHz; BCB microstrip; bandwidth; capacitance; dielectric constant; electroplated gold thermal via; ground plane; inductance; interconnect; power-gain cutoff frequency; transferred-substrate HBT integrated circuit technology; transistor heatsinking; Analog-digital conversion; Bandwidth; Capacitance; Clocks; Electromagnetic heating; Heterojunction bipolar transistors; Inductance; Integrated circuit interconnections; Microwave transistors; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 1997. 5th

Conference_Location

Fort Collins, CO, USA

Print_ISBN

0-7803-3911-8

Type

conf

DOI

10.1109/DRC.1997.612477

Filename

612477