Indirect Exchange Interaction between F and AF Layers

Author

Kim, P.D. ; Yoo, Y. ; Yu, S. ; Turpanov, I.A. ; Khalyapin, D.L. ; Maruschenko, D.A. ; Yun, J. ; Rhee, J.

Author_Institution

Russian Acad. of Sci., Krasnoyarsky

fYear

2006

fDate

8-12 May 2006

Firstpage

618

Lastpage

618

Abstract

In this work we represent a comprehensive study of indirect exchange coupling between ferromagnetic (F) and antiferromagnetic (AF) layers carried out on NiFe(5 nm)/Cu(d)/IrMn(10 nm) thin film structure. NiFe/Cu/IrMn films were fabricated by magnetron sputtering with a seed and a capping layers of Ta(5nm). The thickness d of the Cu spacer was varied from 0.2 nm to 2 nm. The Cu spacer thickness was carefully controlled by sputter condition and the thickness was confirmed by cross sectional transmission electron microscopy (TEM) and Auger depth profile.

Keywords

copper; exchange interactions (electron); ferromagnetic materials; iridium alloys; magnetic multilayers; magnetic thin films; manganese alloys; nickel alloys; sputter deposition; transmission electron microscopy; Auger depth profile; NiFe; NiFeCuIrMn; ferromagnetic-antiferromagnetic coupling; film thickness; indirect exchange interaction; magnetron sputtering; size 0.2 nm to 2 nm; size 10 nm; size 5 nm; thin film structure; transmission electron microscopy; Anisotropic magnetoresistance; Elementary particle exchange interactions; Magnetic anisotropy; Magnetic field measurement; Magnetic resonance; Perpendicular magnetic anisotropy; Physics; Region 8; Sputtering; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.376342

Filename

4262051