Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures

Author

Nemati, Hossein M. ; Fager, Christian ; Gustavsson, Ulf ; Jos, Rik ; Zirath, Herbert

Author_Institution

GigaHertz Centre, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden

fYear

2008

fDate

15-20 June 2008

Firstpage

1505

Lastpage

1508

Abstract

In this paper, switched mode power amplifiers classes of operation and device technologies are characterized versus input power and output supply voltage. The results are used to identify optimal control schemes for use in polar transmitter architectures. Then the effects of different control schemes on the requirements for the power amplifier, and the envelope amplifier, as the main building blocks of this architecture, are investigated.

Keywords

MOS integrated circuits; power amplifiers; GaN; envelope amplifier; optimal control schemes; polar transmitter architectures; switched mode LDMOS; switched mode power amplifiers; Bandwidth; Gallium arsenide; Gallium nitride; Operational amplifiers; Optimal control; Power amplifiers; Semiconductor optical amplifiers; Switched-mode power supply; Transmitters; Voltage; GaN HEMT; LDMOS; Power amplifiers; polar; transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2008 IEEE MTT-S International

Conference_Location

Atlanta, GA

ISSN

0149-645X

Print_ISBN

978-1-4244-1780-3

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2008.4633066

Filename

4633066