Spin dependent transport in CoFe/ITO Ohmic contact at room temperature

Author

YuanQiang, S. ; QiYe, W. ; HuaiWu, Z.

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2006

fDate

8-12 May 2006

Firstpage

621

Lastpage

621

Abstract

This paper presents a heavily doped semiconductor indium-tin-oxide (ITO) as the two dimensional electron gas (2DEG). Samples fabricated by electron beam evaporation consists of a structure of glass substrate/30 nm ITO/30 nm CoFe/15 nm ITO/50 nm CoFe. In addition, a two layer structure ITO/CoFe is designed for the test of the I-V relationship of the ITO/CoFe junction. The spin transport through ohmic contact from CoFe into ITO is proved confidently to be true.

Keywords

cobalt alloys; ferromagnetic materials; heavily doped semiconductors; indium compounds; interface magnetism; iron alloys; ohmic contacts; semiconductor-metal boundaries; spin polarised transport; two-dimensional electron gas; 2DEG; CoFe-ITO; I-V characteristics; SiO₂; current-voltage characteristics; electron beam evaporation; glass substrate; heavily doped semiconductor indium-tin-oxide; magnetic junction; ohmic contact; size 15 nm; size 30 nm; size 50 nm; spin dependent transport; temperature 293 K to 298 K; two dimensional electron gas; Conductivity; Electrical resistance measurement; Glass; Indium tin oxide; Magnetic field measurement; Magnetic films; Ohmic contacts; Spin polarized transport; Substrates; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2006. INTERMAG 2006. IEEE International

Conference_Location

San Diego, CA

Print_ISBN

1-4244-1479-2

Type

conf

DOI

10.1109/INTMAG.2006.376345

Filename

4262054