DocumentCode
2944834
Title
Key factors to suppress thickness variation in MOCVD HfSiON-Films
Author
Yamamoto, Ichiro ; Kato, Yoshitake
Author_Institution
NEC Electron. Corp., Sagamihara
fYear
2007
fDate
15-17 Oct. 2007
Firstpage
1
Lastpage
4
Abstract
We investigated the deposition process reproducibility of extremely-thin (<1 nm) HfSiON-films deposited in a batch-type reactor. The deposition-rate measured on a monitor-wafer appeared to be affected by the base-oxide thickness, substrate doping and the surface material of the monitor-wafer. Furthermore, the deposition-rate is found to be affected also by the surface material of the back-surface of its adjacent wafer. Precise control of these factors is essential for good reproducibility.
Keywords
MOCVD; dielectric materials; hafnium compounds; semiconductor doping; thick films; HfSiON; HfSiON-films; MOCVD; batch-type reactor; deposition; monitor-wafer; substrate doping; thickness variation; Atomic measurements; Dielectric materials; Doping; High K dielectric materials; Inductors; MOCVD; Monitoring; Reproducibility of results; Substrates; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
978-1-4244-1142-9
Electronic_ISBN
1523-553X
Type
conf
DOI
10.1109/ISSM.2007.4446844
Filename
4446844
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