DocumentCode
2945098
Title
Low temperature MOCVD TiN process for 45nm contact metallization
Author
Ai, Hua ; Jackson, Michael ; Yu, Sang Ho
Author_Institution
Appl. Mater. Inc., Santa Clara
fYear
2007
fDate
15-17 Oct. 2007
Firstpage
1
Lastpage
4
Abstract
A low temperature (LT) MO TiN process has been developed to improve the bottom step coverage of MOCVD TiN film. The film properties, including film composition, grain orientation, and structure, have been characterized and are similar to the film properties of the original 405degC MO TiN process. It was also demonstrated that there is no negative impact of LT MO TiN on the iLB/W CVD fill/WCMP integration flow. The extended run showed that the new LT MO-TiN process is stable and has excellent particle performance.
Keywords
MOCVD; crystal microstructure; low-temperature techniques; metallisation; nanotechnology; thin films; titanium compounds; TiN; bottom step coverage; contact metallization; film composition; grain orientation; grain structure; low-temperature MOCVD process; size 45 nm; Chemical analysis; Kinetic theory; Logic devices; MOCVD; Metallization; Performance analysis; Plasma temperature; Temperature dependence; Temperature distribution; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2007. ISSM 2007. International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1523-553X
Print_ISBN
978-1-4244-1142-9
Electronic_ISBN
1523-553X
Type
conf
DOI
10.1109/ISSM.2007.4446860
Filename
4446860
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