Embedding of III-V compound semiconductors into 3D photonic crystals

Summary form only given. Photonic crystals (PhCs) composed of active material allow the creation of a zero-threshold laser utilizing the photonic bandgap effect in the stopband and have been one of the major device applications since the concept of PhCs was proposed. In this work, we developed a process to grow III-V compound semiconductor active layers selectively in the region surrounded by a-Si/SiO/sub 2/ 3D PhCs on InP substrates and observed polarization dependence in the photoluminescence transmitted in the lateral direction in the PhCs. The fabrication process is as follows: (1) 3D PhCs are fabricated by depositing a-Si/SiO/sub 2/ multilayers by rf bias sputtering on the InP substrates on which circular pits with a rectangular lattice are formed; (2) circular pits with diameter of 50 /spl mu/m are formed by dry etching until the surface of the InP substrate is exposed; (3) the buffer layer and the 20 period MQW are grown by MBE, selectively on the exposed lnP surfaces.