DocumentCode
2946833
Title
Bulk-Si with poly bump process scheme for MEMS sensors
Author
Chun-Wen Cheng ; Kai-Chih Liang ; Chia-Hua Chu ; Te-Hao Lee ; Jiou-Kang Lee ; Chung-Hsien Lin ; Hsiao Chin Tuan ; Kalnitsky, Alex ; Weileun Fang ; Horsley, David A.
Author_Institution
Taiwan Semicond. Manuf. Co. Ltd., Hsinchu, Taiwan
fYear
2012
fDate
28-31 Oct. 2012
Firstpage
1
Lastpage
4
Abstract
A MEMS process scheme designed for multi- sensors is presented. This new process scheme includes a poly bump not only provides stiction prevention and gap control function, and also electrical connection between MEMS structure and routing lines. Another advantage for this scheme is a better vacuum level because all material can be high temperature annealed before final encapsulation. This study also demonstrated some MEMS devices using this new scheme, including resonators, accelerometers and magnetometers.
Keywords
annealing; elemental semiconductors; encapsulation; microfabrication; microsensors; sensor fusion; silicon; MEMS sensor; Si; accelerometer; electrical connection; encapsulation; gap control function; high temperature annealing; magnetometer; microfabrication; multisensor design; polybump process scheme; resonator; routing line; Accelerometers; CMOS integrated circuits; Magnetic sensors; Magnetometers; Micromechanical devices; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2012 IEEE
Conference_Location
Taipei
ISSN
1930-0395
Print_ISBN
978-1-4577-1766-6
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2012.6411212
Filename
6411212
Link To Document