DocumentCode
2948708
Title
Resonant inversion of tunneling magnetoresistance using MgO/NiO barriers
Author
Yang, H. ; Yang, S. ; Kaiser, C. ; Parki, S.
Author_Institution
IBM Almaden Res. Center, San Jose
fYear
2006
fDate
8-12 May 2006
Firstpage
865
Lastpage
865
Abstract
In this paper we report the magneto-transport properties, as a function of temperature and bias, of MTJs grown with barriers formed from double layers of MgO and NiO, CoO or MnO as well as triple layers of MgO/NiO, CoO and MnO/MgO.
Keywords
cobalt compounds; galvanomagnetic effects; magnesium compounds; manganese compounds; nickel compounds; tunnelling magnetoresistance; CoO; MgO-NiO; MnO-MgO; double layer barriers; magnetic tunnel junctions; magneto-transport properties; resonant inversion; tunneling magnetoresistance; Amorphous magnetic materials; Annealing; Antiferromagnetic materials; Electrodes; Electrons; Magnetic resonance; Magnetic tunneling; Temperature; Tunneling magnetoresistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2006. INTERMAG 2006. IEEE International
Conference_Location
San Diego, CA
Print_ISBN
1-4244-1479-2
Type
conf
DOI
10.1109/INTMAG.2006.374896
Filename
4262298
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