DocumentCode
2948737
Title
Utilizing infrared for improved FET channel temperature prediction
Author
Darwish, Ali M. ; Bayba, Andrew J. ; Hung, H. Alfred
Author_Institution
Army Research Laboratory, 2800 Powder Mill Rd., Adelphi, MD 20783, USA
fYear
2008
fDate
15-20 June 2008
Firstpage
1301
Lastpage
1303
Abstract
Measuring channel temperature in FETs (field effect transistors) is challenging due to the submicron dimensions of the gate fingers. Among the simplest techniques for temperature measurement is Infrared (IR) microscopy. However, IR is suffers from limited spatial resolution (≫5–10 microns). This paper presents a model for the channel temperature prediction based on IR techniques by reversing the spatial averaging inherent in IR microscopy.
Keywords
Electrical resistance measurement; FETs; Microscopy; Resistance heating; Software measurement; Substrates; Temperature measurement; Thermal conductivity; Thermal resistance; Velocity measurement; Channel Temperature; FET; Gate Length; Reliability; Thermal Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2008 IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
978-1-4244-1780-3
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2008.4633301
Filename
4633301
Link To Document