DocumentCode
2948832
Title
Simulations of H/sub 2/ layers in applied-B ion diodes
Author
Welch, D.R. ; Cuneo, M.E.
Author_Institution
Mission Res. Corp., Albuquerque, NM, USA
Volume
2
fYear
1995
fDate
3-6 July 1995
Firstpage
969
Abstract
Impedance collapse and parasitic ion production have been observed on high-power ion diodes at Sandia National Laboratories with a lithium ion source. A likely cause for this behavior is the presence of contaminant material adsorbed on the anode surface. We have implemented (into the electromagnetic particle-in-cell code IVORY) new modeling to study the effects of hydrogen gas interaction and transport. Using this new capability, we have calculated degraded diode performance when >2 monolayers of hydrogen are present on the anode surface. The qualitative agreement of these simulations with experimental results suggests that a thermally-desorbed neutral layer on the anode may be responsible for the inefficient coupling of diode energy to lithium ions. This material is likely desorbed from the surface as it is heated by cathode electron bombardment. Thus, cleaning of the anode surface and bulk should improve diode performance.
Keywords
anodes; cathodes; hydrogen; ion sources; lithium; physics computing; plasma diodes; plasma production; surface cleaning; H/sub 2/ layers simulation; IVORY electromagnetic particle-in-cell code; Sandia National Laboratories; anode surface; applied-B ion diodes; cathode electron bombardment; contaminant material; degraded diode performance; diode energy; diode performance improvement; high-power ion diodes; hydrogen gas interaction; impedance collapse; lithium ion source; parasitic ion production; thermally-desorbed neutral layer; Anodes; Diodes; Electromagnetic modeling; Hydrogen; Ion sources; Laboratories; Lithium; Production; Surface contamination; Surface impedance;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1995. Digest of Technical Papers., Tenth IEEE International
Conference_Location
Albuquerque, NM, USA
Print_ISBN
0-7803-2791-8
Type
conf
DOI
10.1109/PPC.1995.599738
Filename
599738
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