Modelling of generation dynamics of actively and passively Q-switched microchip lasers

Author

Dement´ev, A. ; Navakas, R.

Author_Institution

Inst. of Phys., Vilnius, Lithuania

fYear

2000

fDate

10-15 Sept. 2000

Abstract

Summary form only given. A point laser model for the simulation of generation of hybridly Q-switched solid-state microchip lasers with continuous diode pumping is proposed, taking into account the Stark splitting of the lasing levels into sublevels, excited state absorption in the passive Q-switches, the finite lifetimes of the both working laser levels and of the excited level of Cr/sup 4+/:YAG, fluctuations of spontaneous emission and pumping power, orientation of crystallographic axes of the saturable absorber in respect to the resonator partial polariser and so on.

Keywords

Q-switching; fluctuations; laser cavity resonators; laser theory; micro-optics; microcavity lasers; optical polarisers; optical saturable absorption; solid lasers; spontaneous emission; Cr/sup 4+/:YAG; Stark splitting; actively Q-switched microchip lasers; continuous diode pumping; crystallographic axes; excited level; excited state absorption; finite lifetimes; generation dynamics modelling; hybridly Q-switched solid-state microchip lasers; lasing levels; passive Q-switches; passively Q-switched microchip lasers; point laser model; pumping power; resonator partial polariser; saturable absorber; spontaneous emission; working laser levels; Hybrid power systems; Laser excitation; Laser modes; Microchip lasers; Power generation; Power lasers; Pump lasers; Solid lasers; Solid modeling; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on

Conference_Location

Nice

Print_ISBN

0-7803-6319-1

Type

conf

DOI

10.1109/CLEOE.2000.909885

Filename

909885