Temperature influence investigation on Hall Effect sensors performance using a lumped circuit model

In order to provide the information on their Hall voltage, sensitivity and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall Effect sensors has been developed. In this sense, the finite element model associated contains both geometrical parameters (dimensions of the cells) and physical parameters such as mobility, conductivity, Hall factor, carrier concentration and the temperature influence on them. Therefore, a scalable finite element model in Cadence, for integrating in circuit environment CMOS Hall Effect devices with different shapes and technologies and assessing their performance, has been also elaborated.