DocumentCode
2950840
Title
Impact of microcavity regime on low voltage InGaAs Fabry-Perot modulators
Author
Byrne, Dallan ; Horan, P. ; Hegarty, J.
Author_Institution
Dept. of Phys., Trinity Coll., Dublin, Ireland
fYear
2000
fDate
10-15 Sept. 2000
Abstract
Summary form only. Low voltage InGaAs MQW pin Fabry-Perot modulator structures are at the boundary of the microcavity regime. Here work is presented on the impact of the microcavity regime on the modulator performance.
Keywords
Fabry-Perot resonators; III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; micro-optics; micromechanical resonators; semiconductor quantum wells; InGaAs; InGaAs MQW pin Fabry-Perot modulator; low voltage; microcavity regime; modulator performance; Fabry-Perot; Indium gallium arsenide; Large Hadron Collider; Light emitting diodes; Lighting; Low voltage; Microcavities; Photoconductivity; Transmitters; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location
Nice
Print_ISBN
0-7803-6319-1
Type
conf
DOI
10.1109/CLEOE.2000.910008
Filename
910008
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