Radiation effects in advanced SOI devices: New insights into Total Ionizing Dose and Single-Event Effects

Author

Gaillardin, M. ; Raine, M. ; Paillet, P. ; Martinez, Manuel ; Marcandella, C. ; Girard, S. ; Duhamel, O. ; Richard, N. ; Andrieu, F. ; Barraud, S. ; Faynot, O.

Author_Institution

DAM, CEA, Arpajon, France

fYear

2013

fDate

7-10 Oct. 2013

Firstpage

1

Lastpage

2

Abstract

The SOI technology has already demonstrated intrinsic resistance to transient radiation effects due to the dielectric isolation provided by the buried oxide. But this special feature raises questions about their Total Ionizing Dose (TID) sensitivity, particularly in Fully Depleted (FD) SOI and multiple-gate devices. This paper thus gives an overview of recent advances in radiation effects on innovative SOI devices. Both TID and Single-Event Effects (SEE) in Extra Thin SOI (ETSOI) and FinFET devices are reviewed as well as upcoming challenges to mitigate radiation effects in nanometer scale SOI technologies.

Keywords

MOSFET; nanoelectronics; radiation hardening (electronics); silicon-on-insulator; ETSOI; FD SOI; FinFET devices; SEE; TID sensitivity; advanced SOI devices; buried oxide; dielectric isolation; extra thin SOI; fully depleted SOI; intrinsic resistance; multiple-gate devices; nanometer scale SOI technology; single-event effects; total ionizing dose effect; transient radiation effect mitigation; FinFETs; Geometry; Logic gates; Radiation effects; Silicon; Threshold voltage; Transient analysis; Extra-Thin SOI (ETSOI); FinFET; Fully Depleted (FD); Silicon-On-Insulator (SOI); Single-Event Effects (SEE); Single-Event Transient (SET); Total Ionizing Dose (TID); Ultra-Thin BOX and Body (UTBB); multiple-gate FET;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/S3S.2013.6716530

Filename

6716530