DocumentCode
2953928
Title
A /spl plusmn/30% tuning range varactor compatible with future scaled technologies
Author
Castello, Rinaldo ; Erratico, P. ; Manzini, S. ; Sveito, F.
Author_Institution
Dipt. di Elettronica, Pavia Univ., Italy
fYear
1998
fDate
11-13 June 1998
Firstpage
34
Lastpage
35
Abstract
A /spl plusmn/30% capacitance modulation of a new variable capacitor has been achieved for a 2 V variation in the controlling bias voltage. The realized varactor is based on a polysilicon/oxide/n-well structure, implemented in a 0.35 /spl mu/m standard CMOS process. The quality factor for a 3.1 pF sample ranges from 17 to 33, at 1800 MHz.
Keywords
CMOS integrated circuits; Q-factor; UHF diodes; UHF integrated circuits; capacitance; tuning; varactors; 0.35 micron; 1800 MHz; 3.1 pF; CMOS process; Si; capacitance modulation; controlling bias voltage; polysilicon/oxide/n-well structure; quality factor; scaled technologies; tuning range; varactor; variable capacitor; CMOS process; Capacitors; Parasitic capacitance; Q factor; Threshold voltage; Transceivers; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-4766-8
Type
conf
DOI
10.1109/VLSIC.1998.687994
Filename
687994
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