DocumentCode
2955397
Title
Compositional and optical characterization of SiOx films deposited by ECR-PECVD for photonics applications
Author
Flynn, M. ; Irving, E. ; Roschuk, T. ; Wojcik, J. ; Mascher, P.
Author_Institution
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
fYear
2004
fDate
29 Sept.-1 Oct. 2004
Firstpage
69
Lastpage
71
Abstract
Thin SiOx films were deposited using ECR-PECVD. The composition and structure of the samples was determined using Rutherford backscattering and Fourier transform infrared spectroscopy while photoluminescence and ellipsometric measurements were used to characterize the samples optically. AFM measurements confirmed the presence of silicon nanocrystals after annealing the samples. These materials have the potential to he used in a variety of applications, including rare-earth doping, as well as their applicability to optical coatings because of the large achievable range of refractive indices.
Keywords
Fourier transform spectra; Rutherford backscattering; annealing; atomic force microscopy; ellipsometry; infrared spectra; nanostructured materials; optical films; photoluminescence; plasma CVD; refractive index; silicon compounds; thin films; AFM measurements; ECR-PECVD; Fourier transform infrared spectroscopy; Rutherford backscattering; SiO2; SiOx films; annealing; compositional characterization; ellipsometric measurements; film deposition; optical characterization; optical coatings; photoluminescence; photonics applications; rare-earth doping; refractive indices; silicon nanocrystals; Annealing; Backscatter; Fourier transforms; Infrared spectra; Nanocrystals; Optical films; Optical refraction; Optical variables control; Photoluminescence; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2004. First IEEE International Conference on
Print_ISBN
0-7803-8474-1
Type
conf
DOI
10.1109/GROUP4.2004.1416656
Filename
1416656
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