DocumentCode
2956188
Title
Pulsed operation at all-monolithic 1.55 /spl mu/m VCSELs with InAlGaAs/InAlAs system
Author
Kwon, Oh-Kyong ; Yoo, Bum-Soo ; Shin, Jae-Hwan ; Baek, Jong-Hyeob ; Lee, Bang-Wook
Author_Institution
Telecommun. Basic Res. Lab., ETRI, Taejon, South Korea
fYear
2000
fDate
10-15 Sept. 2000
Abstract
Summary form only. We explored all-monolithic VCSELs employing InP lattice matched InAlGaAs/InAlAs system and a 2/spl lambda/-thick periodic gain active region. We discuss further results on the electrical pulsed operation of 1.55 /spl mu/m all-monolithic, air-post index guided VCSELs at room temperature.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical pulse generation; quantum well lasers; surface emitting lasers; 1.55 micron; InAlGaAs-InAlAs; QW lasers; air-post index guided VCSEL; all-monolithic VCSEL; electrical pulsed operation; lattice matched system; periodic gain active region; phase matching layer; room temperature; Indium compounds; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2000. Conference Digest. 2000 Conference on
Conference_Location
Nice
Print_ISBN
0-7803-6319-1
Type
conf
DOI
10.1109/CLEOE.2000.910325
Filename
910325
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