• DocumentCode
    295708
  • Title

    Static and dynamic properties of (InGa)As/GaAs quantum dot lasers

  • Author

    Kirstaedter, N. ; Schmidt, O. ; Ledentsov, N.N. ; Grundmann, M. ; Bimberg, D. ; Ustinov, V.M. ; Egorov, A.Yu. ; Zhukov, A.E. ; Maximov, M.V. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Kosogov, A.O. ; Gösele, U. ; Heydenreich, J.

  • Author_Institution
    Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
  • Volume
    1
  • fYear
    1995
  • fDate
    30-31 Oct 1995
  • Firstpage
    290
  • Abstract
    Threshold current, polarization and carrier dynamics in (InGa)As/GaAs quantum dot (QD) structures are studied. Large T0 of 425 K, a low threshold current density of ~80 A cm-2 and an external quantum efficiency of 30% are measured between 50 K-120 K
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; 30 percent; 50 to 120 K; InGaAs-GaAs; carrier dynamics; characteristic temperature; dynamic properties; external quantum efficiency; polarization; quantum dot lasers; static properties; threshold current density; Excitons; Gallium arsenide; Gas lasers; Laser excitation; Laser modes; Luminescence; Quantum dot lasers; Stationary state; Threshold current; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-2450-1
  • Type

    conf

  • DOI
    10.1109/LEOS.1995.484874
  • Filename
    484874
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=295708