• DocumentCode
    2957817
  • Title

    Design and Implementation of BiFET LNAs for W-CDMA / IEEE 802.11a Applications

  • Author

    Moreira, C.P. ; Kerherve, E. ; Jarry, P. ; Belot, D.

  • Author_Institution
    Univ. Bordeaux 1, Talence
  • fYear
    2006
  • fDate
    10-13 Dec. 2006
  • Firstpage
    70
  • Lastpage
    73
  • Abstract
    We present is this article consistent guidelines to the design and implementation of fully-integrated BiFET low noise amplifiers (LNA). The effectiveness of BiFET topology and the applied methodologies are verified throughout measurement results of two fabricated BiFET LNAs. The first LNA is dedicated to W-CDMA applications (2.11-2.17 GHz) and its die area is 1.0 times 0.7 mm2. The second manufactured circuit is targeted to W-LAN IEEE 802.11a standard in European band (5.15-5.35 GHz). The W-LAN LNA die area is 1.0 times 0.57 mm2.
  • Keywords
    MOSFET; code division multiple access; heterojunction bipolar transistors; low noise amplifiers; BiFET LNA; IEEE 802.11a; WCDMA; low noise amplifiers; Circuit noise; Design optimization; Heterojunction bipolar transistors; Impedance matching; Linearity; MOSFET circuits; Multiaccess communication; Noise figure; Topology; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
  • Conference_Location
    Nice
  • Print_ISBN
    1-4244-0395-2
  • Electronic_ISBN
    1-4244-0395-2
  • Type

    conf

  • DOI
    10.1109/ICECS.2006.379703
  • Filename
    4263306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2957817