Monitoring method of the tunnel oxide degradation by MOS capacitor

Author

Hazama, Hiroaki

Author_Institution

Toshiba Corp., Yokohama, Japan

fYear

1998

fDate

23-26 Mar 1998

Firstpage

107

Lastpage

111

Abstract

A tunnel oxide degradation monitoring method using a simple MOS capacitor has been examined. It was found that the V_th shift of an erased flash EEPROM cell after a number of program/erase cycles was correlated with the gate voltage shift to sustain constant current injection under bi-polarity FN (Fowler Nordheim) injection by using a MOS capacitor with source junction. Using an improved experimental set-up, bi-polarity FN injection could be performed for simple MOS capacitors without a source junction, even in a p-type substrate

Keywords

EPROM; MOS capacitors; MOS memory circuits; dielectric thin films; integrated circuit reliability; integrated circuit testing; monitoring; MOS capacitor; MOS capacitor source junction; Si; SiO₂-Si; bi-polarity FN injection; bi-polarity Fowler Nordheim injection; constant current injection; erased flash EEPROM cell; gate voltage shift; monitoring method; p-type substrate; program/erase cycles; threshold voltage shift; tunnel oxide degradation; tunnel oxide degradation monitoring method; Capacitance-voltage characteristics; Degradation; EPROM; Leakage current; MOS capacitors; MOSFET circuits; Monitoring; Space vector pulse width modulation; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on

Conference_Location

Kanazawa

Print_ISBN

0-7803-4348-4

Type

conf

DOI

10.1109/ICMTS.1998.688051

Filename

688051