DocumentCode
2958824
Title
A CMOS analogue function VHDL-AMS behavioral ageing model
Author
Mongellaz, Benoîit ; Marc, Françcois ; Bestory, Corinne ; Danto, Yves
Author_Institution
CNRS UMR, Talence, France
Volume
1
fYear
2004
fDate
4-7 May 2004
Firstpage
187
Abstract
This paper presents a method to develop stressed behavioral models of MOSFET and an analogue block: operational transconductance amplifier. Our approach is based on an experimental tests to evaluate electrical ageing effects on MOSFET. The experimental data set is used to build a MOSFET device ageing VHDL-AMS model that is included in an OTA VHDL-AMS model to define a stressed behavioral model of the amplifier.
Keywords
CMOS analogue integrated circuits; MOSFET; hardware description languages; operational amplifiers; CMOS analogue function; MOSFET; VHDL-AMS behavioral ageing model; electrical ageing effects; operational transconductance amplifier; stressed behavioral model; Aging; Circuit simulation; Degradation; Electric variables; Electron traps; Hot carrier injection; Hot carriers; MOSFETs; Predictive models; Semiconductor device modeling; Ageing Simulation; CMOS; Hot-Carrier; VDHL-AMS;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, 2004 IEEE International Symposium on
Print_ISBN
0-7803-8304-4
Type
conf
DOI
10.1109/ISIE.2004.1571805
Filename
1571805
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