Measurement of `1/f´ noise in narrow poly-silicon emitter bipolar transistor structures

Author

Connor, S.D.

Author_Institution

Bipolar Characterization Group, GEC Plessey Semicond., Oldham, UK

fYear

1998

fDate

23-26 Mar 1998

Firstpage

153

Lastpage

157

Abstract

We present here our initial findings on low frequency noise measurements for shallow emitter polysilicon contacted transistors. Structures from two particular GEC Plessey Semiconductors´ technologies were selected for measurement, to assess the change in low frequency noise performance and modelling issues as bipolar technologies move to ever shallower emitter junctions and smaller emitter windows. We also demonstrate an alternative approach to the problem of identifying the intrinsic corner frequency. Details of our measurement technique are given along with the results of some simulations based on SPICE coefficients extracted from these measurements

Keywords

1/f noise; SPICE; bipolar transistors; elemental semiconductors; semiconductor device models; semiconductor device noise; semiconductor device testing; silicon; 1/f noise; SPICE coefficients; Si; bipolar technologies; emitter junctions; emitter windows; intrinsic corner frequency; low frequency noise measurements; low frequency noise modelling; low frequency noise performance; measurement technique; narrow polysilicon emitter bipolar transistor structures; shallow emitter polysilicon contacted transistor structures; shallow emitter polysilicon contacted transistors; simulations; 1f noise; Bipolar transistors; Current measurement; Frequency measurement; Grain boundaries; Low-frequency noise; Low-noise amplifiers; Noise generators; Noise measurement; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on

Conference_Location

Kanazawa

Print_ISBN

0-7803-4348-4

Type

conf

DOI

10.1109/ICMTS.1998.688060

Filename

688060