DocumentCode
2961818
Title
3D simulation of thin-film bulk acoustic wave resonators (FBAR)
Author
Giraud, Sylvain ; Bila, Stéphane ; Aubourg, Michel ; Cros, Dominique
Author_Institution
UMR CNRS 6172, Limoges
fYear
2006
fDate
10-13 Dec. 2006
Firstpage
1038
Lastpage
1041
Abstract
This article discusses numerical simulations of thin film bulk acoustic wave resonators. FBAR simulation with 1D analytical model permits to quickly determine resonator layers thickness that correspond to the objective resonant frequency. 3D finite element method permits to investigate the effect of the electrode shape on the spurious modes that are present in the electrical impedance. In order to reduce or to suppress those modes, solutions have to be investigated.
Keywords
acoustic resonators; bulk acoustic wave devices; electric impedance; finite element analysis; piezoelectric thin films; FBAR simulation; electrical impedance; finite element method; objective resonant frequency; resonator layers; spurious modes; thin-film bulk acoustic wave resonators; Acoustic waves; Analytical models; Electrodes; Film bulk acoustic resonators; Finite element methods; Impedance; Numerical simulation; Resonant frequency; Shape; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
Conference_Location
Nice
Print_ISBN
1-4244-0395-2
Electronic_ISBN
1-4244-0395-2
Type
conf
DOI
10.1109/ICECS.2006.379969
Filename
4263547
Link To Document