DocumentCode
2962509
Title
Cell Ratio Bounds for Reliable SRAM Operation
Author
Yu, Qiaoyan ; Ampadu, Paul
Author_Institution
Univ. of Rochester, Rochester
fYear
2006
fDate
10-13 Dec. 2006
Firstpage
1192
Lastpage
1195
Abstract
Based on read and write failure analysis, lower and upper bounds for the cell ratio are provided to guide designers in optimizing SRAMs for stability and performance. Simulations show that the error of the proposed closed-form expression is within 10%, an improvement of 20% compared with previously reported bounds. Moreover, considering unequal transistor threshold voltages achieves an additional 13% accuracy improvement.
Keywords
SRAM chips; failure analysis; read-only storage; SRAM operation; cell ratio bounds; read and write failure analysis; transistor threshold voltages; CMOS technology; Closed-form solution; Failure analysis; Inverters; MOSFET circuits; RNA; Random access memory; Stability analysis; Threshold voltage; Upper bound;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
Conference_Location
Nice
Print_ISBN
1-4244-0395-2
Electronic_ISBN
1-4244-0395-2
Type
conf
DOI
10.1109/ICECS.2006.379654
Filename
4263586
Link To Document