• DocumentCode
    2963088
  • Title

    Integrated synapse multiplication circuit for million-neuron networks using sub-micron MOS charge pumping phenomenon

  • Author

    Sagara, Kazuhiko ; Smith, Anthony V.W.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
  • Volume
    1
  • fYear
    1993
  • fDate
    25-29 Oct. 1993
  • Firstpage
    845
  • Abstract
    This paper presents a novel technique for implementing synaptic computation using MOS transistors in a diode configuration to perform synaptic multiplication with the resultant output current flowing into the bulk. The circuit contains only four transistors and can be designed with minimum feature size, which offers the possibility of massively parallel networks. In addition a novel technique to use bulk current summation is introduced, which is realized to place all synapses being connected to the same post-synaptic neuron in the same well. As a result the possibility of million neuron networks in a single silicon chip can be obtained.
  • Keywords
    CMOS integrated circuits; VLSI; multiplying circuits; neural chips; parallel architectures; MOS transistors; diode configuration; integrated synapse multiplication circuit; neuron networks; silicon chip; sub-micron MOS charge pumping phenomenon; Charge pumps; Computer networks; Frequency conversion; Laboratories; MOS devices; MOSFETs; Neural networks; Neurons; Pulse circuits; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Neural Networks, 1993. IJCNN '93-Nagoya. Proceedings of 1993 International Joint Conference on
  • Print_ISBN
    0-7803-1421-2
  • Type

    conf

  • DOI
    10.1109/IJCNN.1993.714045
  • Filename
    714045