DocumentCode
2963088
Title
Integrated synapse multiplication circuit for million-neuron networks using sub-micron MOS charge pumping phenomenon
Author
Sagara, Kazuhiko ; Smith, Anthony V.W.
Author_Institution
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Volume
1
fYear
1993
fDate
25-29 Oct. 1993
Firstpage
845
Abstract
This paper presents a novel technique for implementing synaptic computation using MOS transistors in a diode configuration to perform synaptic multiplication with the resultant output current flowing into the bulk. The circuit contains only four transistors and can be designed with minimum feature size, which offers the possibility of massively parallel networks. In addition a novel technique to use bulk current summation is introduced, which is realized to place all synapses being connected to the same post-synaptic neuron in the same well. As a result the possibility of million neuron networks in a single silicon chip can be obtained.
Keywords
CMOS integrated circuits; VLSI; multiplying circuits; neural chips; parallel architectures; MOS transistors; diode configuration; integrated synapse multiplication circuit; neuron networks; silicon chip; sub-micron MOS charge pumping phenomenon; Charge pumps; Computer networks; Frequency conversion; Laboratories; MOS devices; MOSFETs; Neural networks; Neurons; Pulse circuits; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Neural Networks, 1993. IJCNN '93-Nagoya. Proceedings of 1993 International Joint Conference on
Print_ISBN
0-7803-1421-2
Type
conf
DOI
10.1109/IJCNN.1993.714045
Filename
714045
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