• DocumentCode
    2963150
  • Title

    Effect of lead frame material on plastic-encapsulated IC package cracking under temperature cycling

  • Author

    Nishimura, Asao ; Kawai, Sueo ; Murakami, Gen

  • Author_Institution
    Hitachi Ltd., Ibaraki, Japan
  • fYear
    1989
  • fDate
    22-24 May 1989
  • Firstpage
    524
  • Lastpage
    530
  • Abstract
    Differences in the package cracking mechanisms among lead frame materials are studied both by analysis and experiment. The results of thermal stress analysis indicate that encapsulant stress in the Alloy 42 lead frame package is increased by delamination of the chip pad´s bottom surface. Conversely, stress in the copper lead frame package is mainly determined by delamination of the die bonding layer. The mechanisms predicted for both packages are experimentally verified by ultrasonic inspection of the chip pad´s bottom surfaces and thermal-deformation-based observation of package cross sections. The effect of material properties on cracking is also studied to find ways to prevent cracking. Recommendations are made for lead-frame, encapsulant, and die-bonding materials
  • Keywords
    VLSI; crack-edge stress field analysis; encapsulation; integrated circuit technology; packaging; thermal stress cracking; Alloy 42 lead frame package; Cu lead frame package; FeNi alloy; VLSI technology; die bonding layer delamination; encapsulant stress; lead frame material effect; plastic-encapsulated IC package cracking; temperature cycling; thermal stress analysis; ultrasonic inspection; Copper; Delamination; Lead; Microassembly; Plastic integrated circuit packaging; Plastic packaging; Surface cracks; Temperature; Thermal expansion; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components Conference, 1989. Proceedings., 39th
  • Conference_Location
    Houston, TX
  • Type

    conf

  • DOI
    10.1109/ECC.1989.77800
  • Filename
    77800