High quality InGaAsP/InP multiple quantum well modulator structures for 1.3 and 1.5 μm applications

We report on high quality InGaAsP/InP multiple quantum well structures grown by chemical beam epitaxy with absorption at the 1.3 to 1.5 μm range. Transmission profiles with remarkable excitonic features and sharply defined absorption edges for p-i-n samples with as many as 200 periods are shown to be achievable. Very sharp satellite peaks with linewidth comparable with that from the substrate are shown in the X-ray diffraction. We use a new method to monitor the substrate temperature which shows excellent results in terms of homogeneity of layer thickness and composition even for structures with a large number of periods