Single-step growth of InP/InGaAsP buried stripe MQW lasers on structured InP substrate

Author

Rakovics, V. ; Nagy, G. ; Frigeri, C. ; Longo, F. ; Koltai, F. ; üspöki, S. ; Serényi, M.

Author_Institution

Res. Inst. for Tech. Phys., Hungarian Acad. of Sci., Budapest, Hungary

fYear

1996

fDate

21-25 Apr 1996

Firstpage

556

Lastpage

559

Abstract

This paper reports results of a systematic study on the growth of InGaAsP/InP buried heterostructures having different composition InGaAsP layers and multilayers. We present a detailed description of the structure and single-step growth of junction-defined-buried stripe bulk and QW InP/InGaAsP lasers

Keywords

III-V semiconductors; buried layers; gallium arsenide; gallium compounds; indium compounds; interface structure; liquid phase epitaxial growth; quantum well lasers; semiconductor growth; InGaAsP/InP buried heterostructures; InP; InP-InGaAsP; InP/InGaAsP buried stripe MQW lasers; LPE growth; growth; junction-defined-buried stripe QW InP/InGaAsP lasers; junction-defined-buried stripe bulk InP/InGaAsP lasers; multilayers; single-step growth; structure; structured InP substrate; Diode lasers; Indium phosphide; Laser theory; Nonhomogeneous media; Optical device fabrication; Optical surface waves; Quantum well devices; Semiconductor lasers; Substrates; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492307

Filename

492307