Formation of Ni(Pt) Germanosilicide Using a Sacrificial Si Cap Layer

Author

Chen, Yi-Wei ; Chang, Yu-Lan ; Chen, Yi-Cheng ; Shieh, Kevin ; Huang, Climbing ; Tzou, S.F.

Author_Institution

United Microelectron. Corp., Tainan

fYear

2007

fDate

4-6 June 2007

Firstpage

37

Lastpage

39

Abstract

Ni(Pt) alloy has been implemented in the SiGe silicidation process for 65nm node CMOS device fabrication. A thin Si cap layer was introduced into the in-situ doped Si_1-xGe_xB film stack to further enhance the thermal stability of the silicide film. The Ni(Pt) germanosilicide temperature transition curves have been studied, N-/P-FET mismatch issues have been resolved, and a robust integration flow has been developed for the 65 nm node CMOS device fabrication.

Keywords

Ge-Si alloys; MOSFET; nickel alloys; platinum alloys; silicon; thermal stability; CMOS device fabrication; FET mismatch issues; NiPt; SiGe; germanosilicide formation; integration flow; sacrificial silicon cap layer; silicidation process; size 65 nm; temperature transition curves; thermal stability; CMOS process; Fabrication; Germanium silicon alloys; Robustness; Semiconductor films; Silicidation; Silicides; Silicon germanium; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

International Interconnect Technology Conference, IEEE 2007

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-1069-X

Electronic_ISBN

1-4244-1070-3

Type

conf

DOI

10.1109/IITC.2007.382345

Filename

4263657