Correlation between trap characterization by drain conductance dispersion and current transient spectroscopy in InAlAs/InP HFET

Author

Georgescu, B. ; Ducroquet, F. ; Girard, P. ; Guillot, G. ; Naït-Zerrad, K. ; Post, G.

Author_Institution

CNRS, Inst. Nat. des Sci. Appliquees, Villeurbanne, France

fYear

1996

fDate

21-25 Apr 1996

Firstpage

658

Lastpage

661

Abstract

Low frequency trapping effects in InP doped channel HFETs were investigated by current transient spectroscopy and conduction frequency dispersion measurements. By varying bias and temperatures, information on trap parameters and spatial localization can be obtained. Main dispersion effects ate attributed to InP growth related defects in the channel or at the channel/buffer interface

Keywords

III-V semiconductors; aluminium compounds; electric admittance; electron traps; field effect transistors; indium compounds; integrated optoelectronics; semiconductor device reliability; HFET; III-V semiconductors; OEICs; channel/buffer interface; current transient spectroscopy; drain conductance dispersion; growth related defects; low frequency trapping effects; spatial localization; trap characterization; trap parameters; Chemicals; Dispersion; Frequency; HEMTs; Indium phosphide; Leakage current; MODFETs; Optical modulation; Spectroscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492335

Filename

492335