DocumentCode
2963727
Title
Full Copper Electrochemical Mechanical Planarization (Ecmp) as a Technology Enabler for the 45 and 32nm Nodes
Author
Mellier, M. ; Berger, T. ; Duru, R. ; Zaleski, M. ; Luche, M.C. ; Rivoir, M. ; Goldberg, C. ; Wyborn, G. ; Chang, K.-L. ; Wang, Y. ; Ripoche, V. ; Tsai, S. ; Thothadri, M. ; Hsu, W.-Y. ; Chen, Luo-nan
fYear
2007
fDate
4-6 June 2007
Firstpage
70
Lastpage
72
Abstract
In this work, we demonstrate the capability of Ecmp to meet the 45 nm and 32 nm technology node requirements in terms of topography behavior, the related electrical spread, lithography DOF budget and ULK compatibility.
Keywords
chemical mechanical polishing; copper; dielectric materials; electrolytic polishing; integrated circuit interconnections; lithography; nanoelectronics; planarisation; Cu; ULK compatibility; copper electrochemical mechanical planarization; electrical spreading; lithography depth-of-focus budget; size 32 nm; size 45 nm; topography behavior; ultra low-k materials; Chemical processes; Copper; Electronic mail; Lithography; Planarization; Semiconductor materials; Sheet materials; Slurries; Substrates; Surfaces;
fLanguage
English
Publisher
ieee
Conference_Titel
International Interconnect Technology Conference, IEEE 2007
Conference_Location
Burlingame, CA
Print_ISBN
1-4244-1069-X
Electronic_ISBN
1-4244-1070-3
Type
conf
DOI
10.1109/IITC.2007.382352
Filename
4263664
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