DocumentCode
2964971
Title
New optoelectronic materials
Author
Harris, James
Author_Institution
Stanford Univ., Stanford, CA
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
70
Lastpage
71
Abstract
Optoelectronics is a very materials dependent technology. The metastable growth of new alloy materials and strain have significantly increased the performance and addressable wavelength regions due to these materials technology enhancements. The growth technologies, new materials and resulting devices are described.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; internal stresses; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaInNAsSb; MBE; alloy materials; metastable growth; optoelectronic materials; strain; Annealing; Gallium arsenide; Germanium silicon alloys; Indium phosphide; Optical materials; Optical surface waves; Photonic band gap; Silicon germanium; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634448
Filename
4634448
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