DocumentCode
2964983
Title
Sub-terahertz and terahertz oscillators at room temperature using electron devices
Author
Asada, M.
Author_Institution
CREST, Tokyo Inst. of Technol., Tokyo
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
72
Lastpage
73
Abstract
Compact and coherent sources are key devices for wide applications of the terahertz (THz) frequency range. In this paper, we report on our recent results of RTD oscillators in the THz and sub-THz range.
Keywords
aluminium compounds; gallium arsenide; gallium compounds; indium compounds; resonant tunnelling diodes; submillimetre wave oscillators; tunnel diode oscillators; GaInAs-AlAs; InP; RTD oscillators; electron devices; room temperature subterahertz oscillator; room temperature terahertz oscillators; temperature 293 K to 298 K; Electron devices; Frequency; Injection-locked oscillators; Power harmonic filters; Quantum cascade lasers; Reflector antennas; Slot antennas; Submillimeter wave technology; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634449
Filename
4634449
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