Distributed Amplifier with Narrowband Amplifier Efficiency

Author

Olson, Scott ; Thompson, Bruce ; Stengel, Bob

Author_Institution

Motorola Labs, Plantation

fYear

2007

fDate

3-8 June 2007

Firstpage

155

Lastpage

158

Abstract

A fully integrated tapered output line distributed cascode SiGe HBT amplifier is presented which presents an identical load to each transistor. A nodal analysis of currents in the output transmission line gives insight into the often assumed efficiency/bandwidth trade-off of a distributed amplifier. The four section one half watt amplifier with 50 Omega input and output exhibits a gain of 21 dB from 100 to 800 MHz with a saturated collector efficiency of 79% at 100 MHz.

Keywords

Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; VHF amplifiers; bipolar integrated circuits; distributed amplifiers; heterojunction bipolar transistors; SiGe; cascode HBT amplifier; collector efficiency; efficiency 79 percent; frequency 100 MHz to 800 MHz; gain 21 dB; heterojunction bipolar transistors; integrated tapered output line distributed amplifier; narrowband amplifier; nodal analysis; Bandwidth; Capacitance; Distributed amplifiers; Heterojunction bipolar transistors; Impedance; Narrowband; Power amplifiers; Power transmission lines; Radio frequency; Radiofrequency amplifiers; Bipolar transistor amplifiers; distributed amplifiers (DA); heterojunction bipolar transistors (HBT); power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380313

Filename

4263766