• DocumentCode
    2965868
  • Title

    Improvement of thick InGaN template by thin InGaN buffer grown at low temperature

  • Author

    Zhao, Wei ; Wang, Lai ; Xi, Guangyi ; Li, Hongtao ; Jiang, Yang ; Han, Yanjun ; Luo, Yi

  • Author_Institution
    Dept. of Electron. Eng., Tsinghua Univ., Beijing
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    183
  • Lastpage
    184
  • Abstract
    Thick InGaN templates with an without InGaN buffer were grown using MOCVD method. It is demonstrated that the crystal quality of the InGaN template can be efficiently improved by the InGaN buffer layer.
  • Keywords
    III-V semiconductors; MOCVD coatings; gallium compounds; indium compounds; semiconductor growth; wide band gap semiconductors; InGaN; MOCVD method; crystal quality; low temperature growth; thick template; thin buffer; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634501
  • Filename
    4634501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2965868