Microscopic recombination kinetics in high quality, fully coalesced a-plane GaN ELO structures investigated by ps-time-resolved cathodoluminescence microscopy

Author

Bastek, B. ; Bertram, F. ; Christen, J. ; Wernicke, T. ; Weyers, M. ; Kneissl, M.

Author_Institution

Inst. of Exp. Phys., Otto-von-Guericke-Univ. Magdeburg, Magdeburg

fYear

2008

fDate

2-15 Aug. 2008

Firstpage

191

Lastpage

192

Abstract

The recombination kinetics of the free exciton (FX) and basal plane stacking fault (BSF) emission in a-plane GaN epitaxial lateral overgrowth structures is analyzed by ps-time-resolved cathodoluminescence microscopy in the temperature range from 5K to 300K. The capture of FX by donors and the thermionic emission of holes from the BSF Quantum Well is analyzed.

Keywords

III-V semiconductors; cathodoluminescence; electron-hole recombination; excitons; gallium compounds; semiconductor epitaxial layers; semiconductor quantum wells; stacking faults; thermionic electron emission; time resolved spectra; wide band gap semiconductors; GaN; a-plane ELO structures; a-plane epitaxial lateral overgrowth structures; basal plane stacking fault emission; free exciton; hole thermionic emission; microscopic recombination kinetics; ps-time-resolved cathodoluminescence microscopy; quantum well; Excitons; Gallium nitride; Kinetic theory; Luminescence; Microscopy; Optical polarization; Physics; Piezoelectric polarization; Radiative recombination; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International

Conference_Location

Shonan Village

Print_ISBN

978-1-4244-2656-0

Type

conf

DOI

10.1109/INOW.2008.4634505

Filename

4634505