• DocumentCode
    2966113
  • Title

    Surface Acoustic Wave sensor based on AlN/Sapphire structure for high temperature and high frequency applications

  • Author

    Blampain, E. ; Elmazria, O. ; Aubert, T. ; Assouar, B. ; Legrani, O.

  • Author_Institution
    Inst. Jean Lamour (IJL), Nancy Univ., Vandoeuvre lès Nancy, France
  • fYear
    2011
  • fDate
    28-31 Oct. 2011
  • Firstpage
    610
  • Lastpage
    613
  • Abstract
    In this work, the performance of AlN/Sapphire structure in high frequencies is investigated. Several SAW devices were performed with various designs (gap, wavelength, metallization ratio, ...) to study simultaneously different parameters (acoustic velocity, electromechanical coupling (K2), acoustic propagation loss (α), TCF) versus frequency and temperature. Experimental results showed that as expected, a increases with temperature while K2 is enhanced at high temperatures. Due to the antagonistic evolution of these two parameters, insertion loss decreases or increases as function of the gap. We also evidenced that this structure allows fabrication of devices operating up to 1.5 GHz and that the frequency varies linearly with temperature.
  • Keywords
    III-V semiconductors; aluminium compounds; sapphire; surface acoustic wave sensors; wide band gap semiconductors; AlN-Al2O3; K2 parameter; SAW sensor; TCF parameter; acoustic propagation loss parameter; acoustic velocity parameter; electromechanical coupling parameter; insertion loss; surface acoustic wave sensor; Insertion loss; Loss measurement; Propagation losses; Surface acoustic waves; Temperature; Temperature measurement; Temperature sensors; AlN; High temperature; SAW sensor; Sapphire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2011 IEEE
  • Conference_Location
    Limerick
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-9290-9
  • Type

    conf

  • DOI
    10.1109/ICSENS.2011.6126984
  • Filename
    6126984