DocumentCode
2966125
Title
FET Gate Length Impact on Reliability
Author
Darwish, A.M. ; Bayba, A. ; Hung, H.A.
Author_Institution
Army Res. Lab., Adelphi
fYear
2007
fDate
3-8 June 2007
Firstpage
311
Lastpage
314
Abstract
The constant need for higher speed continues to lead to shorter and shorter gate lengths. An analytical expression relating the reliability and gate length is developed. According to the model, the FET reliability degrades exponentially with decreasing gate length. Experimental observations support the model´s conclusions.
Keywords
field effect transistors; semiconductor device models; semiconductor device reliability; FET gate length; field effect transistors; semiconductor device reliability; Atomic force microscopy; FETs; Fingers; Integrated circuit reliability; Resistance heating; Temperature; Thermal conductivity; Thermal degradation; Thermal force; Thermal resistance; Channel Temperature; FET; Gate Length; Reliability; Thermal Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 2007. IEEE/MTT-S International
Conference_Location
Honolulu, HI
ISSN
0149-645X
Print_ISBN
1-4244-0688-9
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2007.380414
Filename
4263809
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