DocumentCode
2966377
Title
Photonic crystal light-emitting diode fabricated with photoelectrochemical wet etching and phase mask interference
Author
Lin, Cheng-Hung ; Chen, Cheng-Yen ; Yeh, Dong-Ming ; Yang, C.C.
Author_Institution
Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
fYear
2008
fDate
2-15 Aug. 2008
Firstpage
253
Lastpage
254
Abstract
We demonstrate the high light-extraction efficiency by using the photoelectrochemical etching technique for forming photonic crystal structures on an InGaN/GaN quantum-well light-emitting diode through phase-mask interference. More than 90% increase of output power is observed.
Keywords
III-V semiconductors; etching; gallium compounds; indium compounds; light emitting diodes; masks; photoelectrochemistry; photonic crystals; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; phase mask interference; phase-mask interference; photoelectrochemical wet etching; photonic crystal light-emitting diode; photonic crystal structures; quantum-well light-emitting diode; Diffraction; Gallium nitride; Gratings; Interference; Light emitting diodes; Optical scattering; Photonic crystals; Rough surfaces; Surface roughness; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
Conference_Location
Shonan Village
Print_ISBN
978-1-4244-2656-0
Type
conf
DOI
10.1109/INOW.2008.4634533
Filename
4634533
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