• DocumentCode
    2966594
  • Title

    Evaluation of Si wire waveguide fabricated by parallel plate RIE process using double layered EB resist containing C60

  • Author

    Inoue, Keita ; Nishiyam, Nobuhiko ; Enomoto, Haruki ; Tamura, Shigeo ; Maruyama, Takeo ; Arai, Shigehisa

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo
  • fYear
    2008
  • fDate
    2-15 Aug. 2008
  • Firstpage
    283
  • Lastpage
    284
  • Abstract
    By applying a double layered EB resist containing C60, we could form fine vertical shaped rectangular Si wire waveguide on silicon on insurator (SOI) by parallel plate reactive-ion-etching (RIE). The propagation loss of single-mode Si wire waveguide for TE mode was obtained to be 4.5 dB/cm at 1550 nm, which is the lowest value for those fabricated by parallel plate RIE.
  • Keywords
    integrated optics; optical fabrication; optical waveguides; silicon; silicon-on-insulator; sputter etching; wires; RIE; SOI; Si; double layered EB resist; parallel plate reactive-ion-etching; propagation loss; silicon-on-insurator; wire waveguide; Electrooptical waveguides; Optical devices; Optical refraction; Optical variables control; Optical waveguides; Propagation losses; Resists; Silicon; Tellurium; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International
  • Conference_Location
    Shonan Village
  • Print_ISBN
    978-1-4244-2656-0
  • Type

    conf

  • DOI
    10.1109/INOW.2008.4634546
  • Filename
    4634546
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2966594