Ka-Band BiCMOS 4-Bit Phase Shifter with Integrated LNA for Phased Array T/R Modules

Author

Min, Byung-Wook ; Rebeiz, Gabriel M.

Author_Institution

Univ. of Michigan, Ann Arbor

fYear

2007

fDate

3-8 June 2007

Firstpage

479

Lastpage

482

Abstract

This paper presents a 30-38 GHz 4-bit phase shifter with an integrated LNA using a 0.12 mum SiGe BiCMOS process. The two-stage LNA is implemented using SiGe HBT, and the phase shifter is based on MOSFET switches and miniature low-pass networks. The LNA/phase shifter achieves 1plusmn1.5 dB of gain and 5 dB noise figure at 34 GHz. The RMS phase error is less than 7deg at 30-38 GHz. The total chip size is 900times400 mum² (0.36 mm²) excluding pads, and the chip consumes only 3 mA from a 1.8 V bias supply (5.4 mW). To our best knowledge, this is the first implementation of a Ka-band silicon-based phase shifter.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; field effect transistor switches; heterojunction bipolar transistors; low noise amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; millimetre wave phase shifters; 4-bit phase shifter; Ka-band BiCMOS; Ka-band silicon-based phase shifter; MOSFET switches; SiGe; SiGe HBT; current 3 mA; frequency 30 GHz to 38 GHz; gain 1.5 dB; integrated LNA; miniature low-pass networks; noise figure 5 dB; phased array T-R modules; power 5.4 mW; size 0.12 mum; voltage 1.8 V; word length 4 bit; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; MOSFET circuits; Noise figure; Phase shifters; Phased arrays; Silicon germanium; Switches; CMOS switch; Ka-band; LNA; SiGe; T/R module; phase shifter; phased array;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium, 2007. IEEE/MTT-S International

Conference_Location

Honolulu, HI

ISSN

0149-645X

Print_ISBN

1-4244-0688-9

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2007.380511

Filename

4263854