Modeling of photoconductive terahertz photomixers

Author

Saeedkia, Daryoosh ; Safavi-Naeini, Safieddin ; Mansour, Raafat R.

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

Volume

1

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

136

Abstract

For a dc biased photoconductor film excited by two CW laser beams, the continuity equations for the electron and hole densities are solved in their general form along with the appropriate boundary conditions to find photocurrent distribution inside the photoconductor. The dependency of the photocurrent on the applied bias, parameters of the lasers, and beat frequency is explored for typical photomixers made of low-temperature grown GaAs (LTG-GaAs) photoconductor.

Keywords

III-V semiconductors; electron density; gallium arsenide; hole density; laser beams; microwave photonics; photoconducting materials; submillimetre wave mixers; GaAs; LTG-GaAs photoconductor; applied bias; beat frequency; boundary conditions; continuous wave laser beams; dc biased photoconductor film; electron densities; hole densities; laser parameters; photoconductive terahertz photomixers; photocurrent distribution; Boundary conditions; Charge carrier processes; Electron beams; Equations; Frequency; Gallium arsenide; Laser beams; Laser excitation; Laser modes; Photoconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572445

Filename

1572445