DocumentCode
2969025
Title
A fast wavelet collocation method for high-speed VLSI circuit simulation
Author
Zhou, D. ; Chen, N. ; Cai, W.
Author_Institution
Dept. of Electr. Eng., North Carolina Univ., Charlotte, NC, USA
fYear
1995
fDate
5-9 Nov. 1995
Firstpage
115
Lastpage
122
Abstract
This paper presents a fast wavelet collocation method (FWCM) for high-speed circuit simulation. The FWCM has the following properties: (1) It works in the time domain, so that the circuit nonlinearity can be handled, and the accuracy of the result can be well controlled, unlike the method working in the frequency domain where the numerical error may get uncontrolled during the inverse Laplace transform; (2) The wavelet property of localization in both time and frequency domains makes a uniform approximation possible, which is generally not found in the time marching methods; (3) It is very effective in treating the singularities often developed in high-speed ICs due to the property of the wavelets; (4) Calculation of derivatives at all collocation points is optimal and takes O(n log n), where n is the number of collocation points; (5) An adaptive scheme exists; and (6) It has an O(h/sup 4/) convergence rate while the most existing methods only have an O(h/sup 2/) convergence rate, where h is the step length. Numerical experiments further demonstrated the promising features of FWCM in high-speed IC simulation.
Keywords
VLSI; circuit CAD; circuit analysis computing; wavelet transforms; FWCM; VLSI circuit simulation; circuit nonlinearity; fast wavelet collocation method; high-speed circuit simulation; localization; time domain; wavelet collocation; Circuit simulation; Convergence of numerical methods; Error correction; Frequency domain analysis; Laplace equations; Optimal control; Programmable control; VHF circuits; Very large scale integration; Wavelet domain;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design, 1995. ICCAD-95. Digest of Technical Papers., 1995 IEEE/ACM International Conference on
Conference_Location
San Jose, CA, USA
ISSN
1092-3152
Print_ISBN
0-8186-8200-0
Type
conf
DOI
10.1109/ICCAD.1995.480001
Filename
480001
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